composite transistors 1 publication date: december 2003 sjj00230bed XN04407 (xn4407) silicon pnp epitaxial planar type for general amplification features ? two elements incorporated into one package ? reduction of the mounting area and assembly cost by one half basic part number ? 2sb0709a (2sb709a) + 2sb0970 (2sb970) absolute maximum ratings t a = 25 c marking symbol: es internal connection 5 4 3 2 1 6 tr2 tr1 note) the part number in the parenthesis shows conventional part number. parameter symbol rating unit tr1 collector-base voltage v cbo ? 60 v (emitter open) collector-emitter voltage v ceo ? 50 v (base open) emitter-base voltage v ebo ? 7v (collector open) collector current i c ? 100 ma peak collector current i cp ? 200 ma tr2 collector-base voltage v cbo ? 15 v (emitter open) collector-emitter voltage v ceo ? 10 v (base open) emitter-base voltage v ebo ? 7v (collector open) collector current i c ? 500 ma peak collector current i cp ? 1a overall total power dissipation p t 300 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm 1: collector (tr1) 4: collector (tr2) 2: base (tr2) 5: base (tr1) 3: emitter (tr2) 6: emitter (tr1) eiaj: sc-74 mini6-g1 package 2.90 1.9 0.1 0.16 +0.10 ?0.06 2.8 +0.2 ?0.3 1.1 +0.3 ?0.1 1.1 0 to 0.1 +0.2 ?0.1 1.50 0.65 0.15 0.4 0.2 +0.25 ?0.05 0.95 0.30 +0.10 ?0.05 0.50 +0.10 ?0.05 0.95 6 5 4 1 32 +0.20 ?0.05 5? 10?
XN04407 2 sjj00230bed ? tr2 electrical characteristics t a = 25 c 3 c ? tr1 common characteristics chart p t ? t a 0 160 40 120 80 0 500 200 400 100 300 total power dissipation p t ( mw ) ambient temperature t a ( c ) parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 60 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v emitter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 7v collector-base cutoff current (emitter open) i cbo v cb = ? 20 v, i e = 0 ? 0.1 a collector-emitter cutoff current (base open) i ceo v ce = ? 10 v, i b = 0 ? 100 a forward current transfer ratio h fe v ce = ? 10 v, i c = ? 2 ma 160 460 ? collector-emitter saturation voltage v ce(sat) i c = ? 100 ma, i b = ? 10 ma ? 0.3 ? 0.5 v transition frequency f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 2.7 pf (common base, input open circuited) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 15 v collector-emitter voltage (base open) v ceo i c = ? 1 ma, i b = 0 ? 10 v emitter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 7v collector-base cutoff current (emitter open) i cbo v cb = ? 10 v, i e = 0 ? 0.1 a forward current transfer ratio * h fe1 v ce = ? 2 v, i c = ? 500 ma 100 350 ? h fe2 v ce = ? 2 v, i c = ? 1 a 60 collector-emitter saturation voltage v ce(sat) i c = ? 400 ma, i b = ? 8 ma ? 0.16 ? 0.30 v base-emitter saturation voltage v be(sat) i c = ? 400 ma, i b = ? 8 ma ? 0.8 ? 1.2 v transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 130 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 22 pf (common base, input open circuited) note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : pulse measurement
XN04407 3 sjj00230bed characteristics charts of tr1 i c ? v ce i c ? i b i b ? v be i c ? v be v ce(sat) ? i c h fe ? i c c ob ? v cb 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 120 ? 100 ? 80 ? 60 ? 40 ? 20 t a = 25 c ? 250 a ? 200 a ? 150 a ? 100 a ? 50 a i b = ? 300 a collector-emitter voltage v ce (v) collector current i c (ma) 0 ? 1.0 ? 0.2 ? 0.8 ? 0.6 ? 0. 4 ? 1.2 0 ? 160 ? 120 ? 100 ? 80 ? 40 ? 20 ? 60 ? 140 v ce = ? 10 v t a = 25 c base current i b ( ma ) collector current i c ( ma ) 0 ? 0.8 ? 0.2 ? 0.4 ? 0.6 0 ? 4.0 ? 3.0 ? 1.0 ? 2.5 ? 3.5 ? 2.0 ? 0.5 ? 1.5 v ce = ?10 v t a = 25 c base-emitter voltage v be (v) base current i b ( ma ) 0 ? 1.0 ? 0.8 ? 0.2 ? 0.6 ? 0.4 0 ? 120 ? 100 ? 80 ? 60 ? 40 ? 20 v ce = ? 10 v t a = 75 c ? 25 c 25 c base-emitter voltage v be (v) collector current i c (ma) ? 1 ? 10 ? 10 2 ? 10 3 ? 10 ? 3 ? 10 ? 2 ? 10 ? 1 ? 1 ? 10 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) ? 10 ? 1 ? 1 ? 10 2 ? 10 3 ? 10 0 600 500 400 300 200 100 forward current transfer ratio h fe collector current i c (ma) v ce = ? 10 v 25 c ? 25 c t a = 75 c 0 ? 10 ? 20 ? 30 ? 40 10 1 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v )
XN04407 4 sjj00230bed characteristics charts of tr2 i c ? v ce v be(sat) ? i c v ce(sat) ? i c h fe ? i c c ob ? v cb 0 0 ? 6 ? 1 ? 5 ? 2 ? 4 ? 3 ? 100 ? 300 ? 200 ? 400 ? 350 ? 250 ? 150 ? 50 collector-emitter voltage v ce (v) collector current i c (ma) t a = 25 c i b = ? 10 ma ? 9 ma ? 8 ma ? 7 ma ? 6 ma ? 5 ma ? 4 ma ? 3 ma ? 2 ma ? 1 ma i c / i b = 50 t a = ? 25 c 25 c 75 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( ma ) ? 10 ? 10 2 ? 10 3 ? 10 4 ? 10 ? 3 ? 10 ? 2 ? 10 ? 1 ? 1 ? 10 ? 10 ? 10 2 ? 10 3 ? 10 4 ? 10 ? 3 ? 10 ? 2 ? 10 ? 1 ? 1 ? 10 t a = 75 c ? 25 c 25 c i c / i b = 50 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) ? 1 ? 10 ? 10 2 ? 10 3 0 400 300 100 250 350 200 50 150 v ce = ? 2 v ? 25 c 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( ma ) 0 ? 4 ? 8 ? 12 ? 16 10 3 1 10 10 2 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v )
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